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SiC Mosfets

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Gehäusetyp Topologie Sperrspannung [V] RDS on [mOhm] Nennstrom [A] Nennstrom [mA] Nennstrom [25°] Betriebstemperatur[°C] Produkt Feature Produkt Status
No Image GP2T020A120U SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-3L Discrete 1200 20 119 0,119 86
in production
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SemiQ GP2T020A120H GP2T020A120H SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-4L Discrete 1200 20 119 0,119 86 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 800mJ* • Driver source pin for gate driving
 in production
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SemiQ GP2T040A120U GP2T040A120U SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-3L Discrete 1200 37 63 0,063 47 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ*
 in production
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SemiQ GP2T040A120H GP2T040A120H SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-4L Discrete 1200 37 63 0,063 47 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving
 in production
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SemiQ GP2T040A120J GP2T040A120J SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-7L Discrete 1200 38 66 0,066 49 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving
 in production
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SemiQ GP2T080A120U GP2T080A120U SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-3L Discrete 1200 77 35 0,035 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 200mJ*
 in production
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SemiQ GP2T080A120H GP2T080A120H SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-4L Discrete 1200 77 35 0,035 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving • Increased creepage due to notched design
 in production
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SemiQ GP2T080A120J GP2T080A120J SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-7L Discrete 1200 77 35 0,035 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving
 in production
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SemiQ GCMS010B120S1-E1 GCMS010B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 9 218 0,218 157 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX010B120S1-E1 GCMX010B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 10 202 0,202 146 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMS080B120S1-E1 GCMS080B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 77 30 0,03 22 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling diode with zero reverse recovery SiC SBDs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX040B120S1-E1 GCMX040B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 40 57 0,057 42 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX080B120S1-E1 GCMX080B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 80 30 0,03 22 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX020B120S1-E1 GCMX020B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 20 113 0,113 81 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SiC Dioden

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Gehäusetyp Nennspannung[Vdc] Nennstrom [A] Nennstrom [mA] Produkt Feature Produkt Status
SemiQ GP3D006A065A GP3D006A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 6 0,006
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 29mJ • All parts tested to greater than 715V
 in production
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No Image GP3D006A065D SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-263 650 6 0,006
in production
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SemiQ GP3D008A065A GP3D008A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 8 0,008
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D008A065D GP3D008A065D SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-263 650 8 0,008
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D010A065A GP3D010A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D010A065B GP3D010A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D010A065D GP3D010A065D SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-263 650 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D012A065A GP3D012A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 12 0,012
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D012A065B GP3D012A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 12 0,012
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ
 in production
Anfragen
SemiQ GP3D020A065A GP3D020A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D020A065B GP3D020A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D030A065B GP3D030A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 30 0,03
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ
 in production
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SemiQ GP3D050A065B GP3D050A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 50 0,05
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 333mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D020A065U GP3D020A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D024A065U GP3D024A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 24 0,024
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ per leg
 in production
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SemiQ GP3D040A065U GP3D040A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 40 0,04
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D010A120A GP3D010A120A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1200 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D010A120B GP3D010A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D015A120A GP3D015A120A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1200 15 0,015
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D015A120B GP3D015A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 15 0,015
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D020A120A GP3D020A120A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1200 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D020A120B GP3D020A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D030A120B GP3D030A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 30 0,03
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ • All parts tested to greater than 1400V
 in production
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No Image GP3D040A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 40 0,04
in production
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SemiQ GP3D050A120B GP3D050A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 50 0,05
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 666mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D020A120U GP3D020A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D030A120U GP3D030A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 30 0,03
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D040A120U GP3D040A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 40 0,04
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D060A120U GP3D060A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 60 0,06
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ per leg • All parts tested to greater than 1400V
 in production
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SemiQ GP3D005A170B GP3D005A170B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1700 5 0,005
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 145mJ
 in production
Anfragen
SemiQ GP3D010A170B GP3D010A170B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1700 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 350mJ • All parts tested to greater than 1870V • High forward surge current
 in production
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No Image GP3D020A170A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1700 20 0,02
in production
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SemiQ GP3D020A170B GP3D020A170B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1700 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 600mJ • All parts tested to greater than 1870V
 in production
Anfragen
SemiQ GP3D016A065U GP3D016A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 16 0,016
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ per leg • All parts tested to greater than 715V
 in production
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No Image GP3D006A065F SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220FP-2L 650 6 0,006
in production
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No Image GP3D008A065F SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220FP-2L 650 8 0,008
in production
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