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Si Thyristoren

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Sperrspannung [V] Nennstrom [A] Nennstrom [mA] Produkt Feature Produkt Status
Techsem Y24KPA Y24KPA Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 400 600 0,6
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y30KPA Y30KPA Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 400 1000 1
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y38KPA Y38KPA Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 400 1500 1,5
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y24KPC Y24KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 500 0,5
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y30KPC Y30KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 1000 1
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y38KPC Y38KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 1500 1,5
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y50KPC Y50KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 2500 2,5
In Production
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Techsem Y65KPC Y65KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 3000 3
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y76KPC Y76KPC Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 600 to 1000 4000 4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y24KPE Y24KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 400 0,4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y30KPE Y30KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 600 0,6
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y38KPE Y38KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 1000 1
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y50KPE Y50KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 1800 1,8
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y65KPE Y65KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 2800 2,8
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y76KPE Y76KPE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 4000 4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem H38KPR H38KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 400 0,4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem H50KPR H50KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 900 0,9
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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No Image H65KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 1600 1,6
In Production
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Techsem H89KPR H89KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 2200 2,2
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem H100KPR H100KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 3500 3,5
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem H125KPR H125KPR Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 6000 to 6500 5200 5,2
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y50KPJ Y50KPJ Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 3000 to 4200 1200 1,2
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y65KPJ Y65KPJ Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 3000 to 4200 1900 1,9
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y76KPJ Y76KPJ Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 3000 to 4200 2400 2,4
• Center amplifying gate • Metal case with ceramic insulator • Low on-state and switching losses
In Production
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Techsem Y30KKE Y30KKE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 400 0,4
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
In Production
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Techsem Y38KKE Y38KKE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 800 0,8
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
In Production
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Techsem Y50KKE Y50KKE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 1300 1,3
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
In Production
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Techsem Y65KKE Y65KKE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 2000 2
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
In Production
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Techsem Y76KKE Y76KKE Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 1200 to 1800 2700 2,7
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
In Production
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Techsem Y70KKG Y70KKG Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 2000 to 2800 2100 2,1
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
In Production
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Techsem Y76KKG Y76KKG Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 2000 to 2800 2700 2,7
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
In Production
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Techsem Y89KKG Y89KKG Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 2000 to 2800 3800 3,8
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
In Production
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Techsem Y100KKG Y100KKG Techsem Scheibenzelle Si Thyristoren Aktive Komponenten 2000 to 2800 4800 4,8
• Interdigitated amplifying gates • Fast turn-on and high di/dt • Low switching losses
In Production
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Techsem MTC26 MTC26 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 26 0,026
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MTC40 MTC40 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 40 0,04
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MTC55 MTC55 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 55 0,055
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MTC70 MTC70 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 70 0,07
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MTC90 MTC90 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 90 0,09
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MTC110 MTC110 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 110 0,11
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MTC135 MTC135 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 135 0,135
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MTC160 MTC160 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 160 0,16
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MTC182 MTC182 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 182 0,182
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MTC200 MTC200 Techsem Module Si Thyristoren Aktive Komponenten 2000 to 2500 200 0,2
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MTC250 MTC250 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 2500 250 0,25
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MTC285 MTC285 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 285 0,285
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MTC500 MTC500 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 500 0,5
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MTC570 MTC570 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 570 0,57
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem Mt500 Mt500 Techsem Module Si Thyristoren Aktive Komponenten 1200 to 1800 400 0,4
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem Mt400 Mt400 Techsem Module Si Thyristoren Aktive Komponenten 2000 to 2500 400 0,4
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Si Dioden

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Sperrspannung [V] Nennstrom [A] Nennstrom [mA] Produkt Feature Produkt Status
Techsem Y24ZPA Y24ZPA Techsem Scheibenzelle Si Dioden Aktive Komponenten 400 1000 1
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
In Production
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Techsem Y30ZPA Y30ZPA Techsem Scheibenzelle Si Dioden Aktive Komponenten 400 1460 1,46
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
In Production
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Techsem Y38ZPA Y38ZPA Techsem Scheibenzelle Si Dioden Aktive Komponenten 400 1990 1,99
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
In Production
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Techsem Y50ZPA Y50ZPA Techsem Scheibenzelle Si Dioden Aktive Komponenten 400 6300 6,3
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
In Production
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Techsem Y65ZPA Y65ZPA Techsem Scheibenzelle Si Dioden Aktive Komponenten 400 8500 8,5
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
In Production
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Techsem Y24ZPC Y24ZPC Techsem Scheibenzelle Si Dioden Aktive Komponenten 1200 to 2000 600 0,6
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
In Production
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Techsem Y30ZPC Y30ZPC Techsem Scheibenzelle Si Dioden Aktive Komponenten 1200 to 2000 1310 1,31
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
In Production
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Techsem Y38ZPC Y38ZPC Techsem Scheibenzelle Si Dioden Aktive Komponenten 1200 to 2000 1680 1,68
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
In Production
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Techsem Y50ZPC Y50ZPC Techsem Scheibenzelle Si Dioden Aktive Komponenten 1200 to 2000 3000 3
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
In Production
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Techsem Y76ZPC Y76ZPC Techsem Scheibenzelle Si Dioden Aktive Komponenten 1200 to 2000 6000 6
• Low forward voltage drop • High reverse voltage • Hermetic metal cases with ceramic insulators
In Production
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Techsem MDC26 MDC26 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 26 0,026
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDC40 MDC40 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 40 0,04
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDC55 MDC55 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 55 0,055
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDC70 MDC70 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 70 0,07
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDC90 MDC90 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 90 0,09
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDC110 MDC110 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 110 0,11
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDC135 MDC135 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 135 0,135
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDC160 MDC160 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 160 0,16
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDC182 MDC182 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 182 0,182
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDC200 MDC200 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 200 0,2
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDC250 MDC250 Techsem Module Si Dioden Aktive Komponenten 1200 to 2500 250 0,25
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDC300 MDC300 Techsem Module Si Dioden Aktive Komponenten 1200 to 2500 300 0,3
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDC500 MDC500 Techsem Module Si Dioden Aktive Komponenten 1200 to 2500 500 0,5
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDC570 MDC570 Techsem Module Si Dioden Aktive Komponenten 1200 to 1800 570 0,57
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MD500 MD500 Techsem Module Si Dioden Aktive Komponenten 1200 to 2500 400 0,4
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Thyristor-Dioden-Module

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Sperrspannung [V] Nennstrom [A] Nennstrom [mA] Produkt Feature Produkt Status
Techsem MFC26 MFC26 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 26 0,026
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MFC40 MFC40 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 40 0,04
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MFC55 MFC55 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 55 0,055
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
Anfragen
Techsem MFC70 MFC70 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 70 0,07
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
Anfragen
Techsem MFC90 MFC90 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 90 0,09
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
Anfragen
Techsem MFC110 MFC110 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 110 0,11
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
Anfragen
Techsem MFC135 MFC135 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 135 0,135
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
Anfragen
Techsem MFC160 MFC160 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 160 0,16
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
Anfragen
Techsem MFC182 MFC182 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 182 0,182
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MFC200 MFC200 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 2000 to 2500 200 0,2
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MFC250 MFC250 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 2500 250 0,25
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
Anfragen
Techsem MFC285 MFC285 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 285 0,285
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MFC500 MFC500 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 500 0,5
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MFC570 MFC570 Techsem Module Thyristor-Dioden-Module Aktive Komponenten 1200 to 1800 570 0,57
• Isolated mounting base 3000V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Gleichrichter

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Sperrspannung [V] Nennstrom [A] Nennstrom [mA] Produkt Feature Produkt Status
Techsem MDS50 MDS50 Techsem Module Gleichrichter Aktive Komponenten 800 to 1600 50 0,05
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDS75 MDS75 Techsem Module Gleichrichter Aktive Komponenten 800 to 1600 75 0,075
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDS100 MDS100 Techsem Module Gleichrichter Aktive Komponenten 800 to 1600 100 0,1
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDS150 MDS150 Techsem Module Gleichrichter Aktive Komponenten 800 to 1600 150 0,15
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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Techsem MDS200 MDS200 Techsem Module Gleichrichter Aktive Komponenten 800 to 1600 200 0,2
• Isolated mounting base 2500V~ • Pressure contact technology with increased power cycling capability • Space and weight saving
In Production
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