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SiC Mosfets

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Gehäusetyp Topologie Sperrspannung [V] RDS on [mOhm] Nennstrom [A] Nennstrom [mA] Nennstrom [25°] Betriebstemperatur[°C] Produkt Feature Produkt Status
No Image GP2T020A120X-SBT SemiQ Bare Die SiC Mosfets Aktive Komponenten sawn on blue tape 1200 20
in production
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SemiQ GP2T020A120X GP2T020A120X SemiQ Bare Die SiC Mosfets Aktive Komponenten unsawn wafer 1200 20
in production
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No Image GP2T040A120X-SBT SemiQ Bare Die SiC Mosfets Aktive Komponenten sawn on blue tape 1200 40
in production
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SemiQ GP2T040A120X GP2T040A120X SemiQ Bare Die SiC Mosfets Aktive Komponenten unsawn wafer 1200 40
in production
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No Image GP2T080A120X-SBT SemiQ Bare Die SiC Mosfets Aktive Komponenten sawn on blue tape 1200 80
in production
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SemiQ GP2T080A120X GP2T080A120X SemiQ Bare Die SiC Mosfets Aktive Komponenten unsawn wafer 1200 80
in production
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No Image GP2T020A120U SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-3L Discrete 1200 20 119 0,119 86
in production
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SemiQ GP2T020A120H GP2T020A120H SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-4L Discrete 1200 20 119 0,119 86 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 800mJ* • Driver source pin for gate driving
 in production
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SemiQ GP2T040A120U GP2T040A120U SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-3L Discrete 1200 37 63 0,063 47 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ*
 in production
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SemiQ GP2T040A120H GP2T040A120H SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-4L Discrete 1200 37 63 0,063 47 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving
 in production
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SemiQ GP2T040A120J GP2T040A120J SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-7L Discrete 1200 38 66 0,066 49 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving
 in production
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SemiQ GP2T080A120U GP2T080A120U SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-3L Discrete 1200 77 35 0,035 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 200mJ*
 in production
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SemiQ GP2T080A120H GP2T080A120H SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-4L Discrete 1200 77 35 0,035 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving • Increased creepage due to notched design
 in production
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SemiQ GP2T080A120J GP2T080A120J SemiQ SiC Diskret SiC Mosfets Aktive Komponenten TO-247-7L Discrete 1200 77 35 0,035 26 -55 to 175
• High speed switching • Reliable body diode • All parts tested to above 1400 V • Avalanche tested to 200mJ • Driver source pin for gate driving
 in production
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SemiQ GCMS010B120S1-E1 GCMS010B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 9 218 0,218 157 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX010B120S1-E1 GCMX010B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 10 202 0,202 146 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMS080B120S1-E1 GCMS080B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 77 30 0,03 22 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling diode with zero reverse recovery SiC SBDs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMS040B120S1-E1 GCMS040B120S1-E1 SemiQ SiC Module SiC Mosfets Aktive Komponenten SOT-227 Module 1200 37 57 0,057 42 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX040B120S1-E1 GCMX040B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 40 57 0,057 42 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX080B120S1-E1 GCMX080B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 80 30 0,03 22 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMS020B120S1-E1 GCMS020B120S1-E1 SemiQ SiC Module SiC Mosfets Aktive Komponenten SOT-227 Module 1200 20 113 0,113 81 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX020B120S1-E1 GCMX020B120S1-E1 SemiQ SiC Diskret SiC Mosfets Aktive Komponenten SOT-227 Discrete 1200 20 113 0,113 81 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
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SemiQ GCMX020A120B2B1P GCMX020A120B2B1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B2 Half Bridge Module 1200 19 102 0,102 89 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX010A120B2B1P GCMX010A120B2B1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B2 Half Bridge Module 1200 9 214 0,214 186 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX010A120B3B1P GCMX010A120B3B1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Half Bridge Module 1200 9 173 0,173 151 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX005A120B3B1P GCMX005A120B3B1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Half Bridge Module 1200 4,4 383 0,383 331 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX040A120B3H1P GCMX040A120B3H1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Full Bridge Module 1200 38 53 0,053 46 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX020A120B3H1P GCMX020A120B3H1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Full Bridge Module 1200 18,1 93 0,093 81 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX020A120B2H1P GCMX020A120B2H1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B2 Full Bridge Module 1200 18 102 0,102 88 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SemiQ GCMX040A120B2H1P GCMX040A120B2H1P SemiQ SiC Module SiC Mosfets Aktive Komponenten B3 Full Bridge Module 1200 38 56 0,056 49 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
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SiC Dioden

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Gehäusetyp Topologie Nennspannung[Vdc] Nennstrom [A] Nennstrom [mA] Abmessungen L [mm] Abmessungen W/D [mm] Produkt Feature Produkt Status
SemiQ GP3D006A065X-SBT GP3D006A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 6 0,006 1,37 1,37
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D008A065X-SBT GP3D008A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 8 0,008 1,54 1,54
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D010A065X-SBT GP3D010A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 10 0,01 1,78 1,78
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D012A065X-SBT GP3D012A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 12 0,012 1,5 2,9
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D020A065X-SBT GP3D020A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 20 0,02 2,39 2,39
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D030A065X-SBT GP3D030A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 30 0,03 2,86 2,86
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D050A065X-SBT GP3D050A065X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 650 50 0,05 3,5 3,5
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D010A120X-SBT GP3D010A120X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1200 10 0,01 2,4 2,4
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
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SemiQ GP3D015A120X-SBT GP3D015A120X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1200 15 0,015 2,12 4,1
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D020A120X-SBT GP3D020A120X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1200 20 0,02 3,25 3,25
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D030A120X-SBT GP3D030A120X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1200 30 0,03 3,9 3,9
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D050A120X-SBT GP3D050A120X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1200 50 0,05 4,93 4,93
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D005A170X-SBT GP3D005A170X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1700 5 0,005 2,4 2,4
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D010A170X-SBT GP3D010A170X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1700 10 0,01 2,91 2,91
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D020A170X-SBT GP3D020A170X-SBT SemiQ Bare Die SiC Dioden Aktive Komponenten sawn on blue tape 1700 20 0,02 3,95 3,95
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Reduced temperature dependence of Vf
 in production
Anfragen
SemiQ GP3D006A065A GP3D006A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 6 0,006
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 29mJ • All parts tested to greater than 715V
 in production
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No Image GP3D006A065D SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-263 650 6 0,006
in production
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SemiQ GP3D008A065A GP3D008A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 8 0,008
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D008A065D GP3D008A065D SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-263 650 8 0,008
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D010A065A GP3D010A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D010A065B GP3D010A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D010A065D GP3D010A065D SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-263 650 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D012A065A GP3D012A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 12 0,012
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D012A065B GP3D012A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 12 0,012
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ
 in production
Anfragen
SemiQ GP3D020A065A GP3D020A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D020A065B GP3D020A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D030A065B GP3D030A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 30 0,03
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ
 in production
Anfragen
SemiQ GP3D050A065B GP3D050A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 50 0,05
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 333mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D020A065U GP3D020A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D024A065U GP3D024A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 24 0,024
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ per leg
 in production
Anfragen
SemiQ GP3D040A065U GP3D040A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 40 0,04
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D010A120A GP3D010A120A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1200 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D010A120B GP3D010A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D015A120A GP3D015A120A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1200 15 0,015
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D015A120B GP3D015A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 15 0,015
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D020A120A GP3D020A120A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1200 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D020A120B GP3D020A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D030A120B GP3D030A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 30 0,03
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ • All parts tested to greater than 1400V
 in production
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No Image GP3D040A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 40 0,04
in production
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SemiQ GP3D050A120B GP3D050A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 50 0,05
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 666mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D020A120U GP3D020A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D030A120U GP3D030A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 30 0,03
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D040A120U GP3D040A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 40 0,04
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D060A120U GP3D060A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 60 0,06
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D005A170B GP3D005A170B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1700 5 0,005
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 145mJ
 in production
Anfragen
SemiQ GP3D010A170B GP3D010A170B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1700 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 350mJ • All parts tested to greater than 1870V • High forward surge current
 in production
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No Image GP3D020A170A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1700 20 0,02
in production
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SemiQ GP3D020A170B GP3D020A170B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1700 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 600mJ • All parts tested to greater than 1870V
 in production
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SemiQ GP3D016A065U GP3D016A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 16 0,016
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ per leg • All parts tested to greater than 715V
 in production
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No Image GP3D006A065F SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220FP-2L 650 6 0,006
in production
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No Image GP3D008A065F SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220FP-2L 650 8 0,008
in production
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SemiQ GHXS010A060S-D3 GHXS010A060S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 600 10 0,01
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
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SemiQ GHXS020A060S-D3 GHXS020A060S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 600 20 0,02
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
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SemiQ GHXS030A060S-D3 GHXS030A060S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 600 30 0,03
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 700V
in production
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SemiQ GHXS030A060S-D1E GHXS030A060S-D1E SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Rectifier Bridge 600 30 0,03
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
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SemiQ GHXS050A060S-D3 GHXS050A060S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 600 50 0,05
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
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SemiQ GHXS050B065S-D3 GHXS050B065S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 650 50 0,05
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
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SemiQ GHXS100B065S-D3 GHXS100B065S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 650 100 0,1
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V
in production
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SemiQ GHXS015A120S-D1 GHXS015A120S-D1 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Rectifier Bridge 1200 15 0,015
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
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SemiQ GHXS015A120S-D3 GHXS015A120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 15 0,015
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
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SemiQ GHXS030A120S-D3 GHXS030A120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 30 0,03
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
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SemiQ GHXS030A120S-D1E GHXS030A120S-D1E SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Rectifier Bridge 1200 30 0,03
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
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SemiQ GHXS045A120S-D3 GHXS045A120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 45 0,045
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
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SemiQ GHXS050B120S-D3 GHXS050B120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 50 0,05
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
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SemiQ GHXS060A120S-D3 GHXS060A120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 60 0,06
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation
in production
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SemiQ GHXS100B120S-D3 GHXS100B120S-D3 SemiQ SiC Module SiC Dioden Aktive Komponenten SOT-227 Duel Diode Pack 1200 100 0,1
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
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SemiQ GHXS300A120S7D5 GHXS300A120S7D5 SemiQ SiC Module SiC Dioden Aktive Komponenten S7 Half Bridge 1200 300 0,3
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
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SemiQ GHXS400A120S7D5 GHXS400A120S7D5 SemiQ SiC Module SiC Dioden Aktive Komponenten S7 Half Bridge 1200 400 0,4
• SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 1400V
in production
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