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SiC Mosfets

Image Series/Type Manufacturer Product Group Category Main Category Housing Topology Blocking Voltage[V] RDS on [mOhm] Rated Current [A] Rated Current [mA] Rated Current [25°] Operation Temperature[°C] Product Feature Product Status
SemiQ GCMS010B120S1-E1 GCMS010B120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 9 218 0.218 157 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
Request
SemiQ GCMX010B120S1-E1 GCMX010B120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 10 202 0.202 146 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
Request
SemiQ GCMS080B120S1-E1 GCMS080B120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 77 30 0.03 22 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling diode with zero reverse recovery SiC SBDs • Simple to drive • Kelvin reference for stable operation
 in production
Request
SemiQ GCMS040B120S1-E1 GCMS040B120S1-E1 SemiQ SiC module SiC Mosfets Active Components SOT-227 Module 1200 37 57 0.057 42 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
Request
SemiQ GCMX040B120S1-E1 GCMX040B120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 40 57 0.057 42 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
Request
SemiQ GCMX080B120S1-E1 GCMX080B120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 80 30 0.03 22 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
Request
SemiQ GCMS020B120S1-E1 GCMS020B120S1-E1 SemiQ SiC module SiC Mosfets Active Components SOT-227 Module 1200 20 113 0.113 81 -55 to 175
• High speed switching SiC MOSFETs • Freewheeling SiC SBDs with zero reverse recovery • Simple to drive • Kelvin reference for stable operation
 in production
Request
SemiQ GCMX020B120S1-E1 GCMX020B120S1-E1 SemiQ SiC discrete SiC Mosfets Active Components SOT-227 Discrete 1200 20 113 0.113 81 -55 to 175
• High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation
 in production
Request
SemiQ GCMX020A120B2B1P GCMX020A120B2B1P SemiQ SiC module SiC Mosfets Active Components B2 Half Bridge Module 1200 19 102 0.102 89 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Request
SemiQ GCMX010A120B2B1P GCMX010A120B2B1P SemiQ SiC module SiC Mosfets Active Components B2 Half Bridge Module 1200 9 214 0.214 186 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Request
SemiQ GCMX010A120B3B1P GCMX010A120B3B1P SemiQ SiC module SiC Mosfets Active Components B3 Half Bridge Module 1200 9 173 0.173 151 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Request
SemiQ GCMX005A120B3B1P GCMX005A120B3B1P SemiQ SiC module SiC Mosfets Active Components B3 Half Bridge Module 1200 4.4 383 0.383 331 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Request
SemiQ GCMX040A120B3H1P GCMX040A120B3H1P SemiQ SiC module SiC Mosfets Active Components B3 Full Bridge Module 1200 38 53 0.053 46 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Request
SemiQ GCMX020A120B3H1P GCMX020A120B3H1P SemiQ SiC module SiC Mosfets Active Components B3 Full Bridge Module 1200 18.1 93 0.093 81 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Request
SemiQ GCMX020A120B2H1P GCMX020A120B2H1P SemiQ SiC module SiC Mosfets Active Components B2 Full Bridge Module 1200 18 102 0.102 88 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Request
SemiQ GCMX040A120B2H1P GCMX040A120B2H1P SemiQ SiC module SiC Mosfets Active Components B3 Full Bridge Module 1200 38 56 0.056 49 -40 to 175
• High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350 V • Kevin reference for stable operation • Press fit terminal connection
 in production
Request
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