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SiC Mosfets

Image Series/Type Manufacturer Product Group Category Main Category Housing Topology Blocking Voltage[V] RDS on [mOhm] Rated Current [A] Rated Current [mA] Rated Current [25°] Operation Temperature[°C] Product Feature Product Status
SemiQ GP2T020A120X GP2T020A120X SemiQ Bare Die SiC Mosfets Active Components unsawn wafer 1200 20
in production
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SemiQ GP2T040A120X GP2T040A120X SemiQ Bare Die SiC Mosfets Active Components unsawn wafer 1200 40
in production
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SemiQ GP2T080A120X GP2T080A120X SemiQ Bare Die SiC Mosfets Active Components unsawn wafer 1200 80
in production
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SemiQ GP2T040A120J GP2T040A120J SemiQ SiC discrete SiC Mosfets Active Components TO-247-7L Discrete 1200 38 66 0.066 49 -55 to 175
• High speed switching • Reliable body diode • All parts tested to greater than 1,400 V • Avalanche tested to 400mJ* • Driver source pin for gate driving
in production
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